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gds gate drain source fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature benefits improved gate, avalanche and dynamic dv/dt ruggedness fully characterized capacitance and avalanche soa enhanced body diode dv/dt and di/dt capability lead-free applications brushed motor drive applications bldc motor drive applications battery powered circuits half-bridge and full-bridge topologies synchronous rectifier applications resonant mode power supplies or-ing and redundant power switches dc/dc and ac/dc converters dc/ac inverters v dss 40v r ds(on) typ. 2.0m ? max. 2.5m ? i d 208a i d (package limited) 120a 25 50 75 100 125 150 175 t c , case temperature (c) 0 40 80 120 160 200 240 i d , d r a i n c u r r e n t ( a ) limited by package 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c d s g to-220ab IRFB7440Gpbf halogen-free form quantity IRFB7440Gpbf to-220 tube 50 IRFB7440Gpbf base part number package type standard pack orderable part number IRFB7440Gpbf 2014-8-13 1 www.kersemi.com
calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 120a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 0.048mh r g = 50 ? , i as = 100a, v gs =10v. i sd ? 100a, di/dt ? 1330a/ s, v dd ?? v (br)dss , t j ? 175c. pulse width ? 400 s; duty cycle ? 2%. c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ?
this value determined from sample failure population, starting t j = 25c, l= 0.048mh, r g = 50 ? , i as = 100a, v gs =10v. absolute maximum ratings symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (wire bond limited) i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) mounting torque, 6-32 or m3 screw avalanche characteristics e as (thermally limited) single pulse avalanche energy mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj thermal resistance symbol parameter typ. max. units r ? jc junction-to-case ??? 0.72 r ? cs case-to-sink, flat greased surface 0.50 ??? r ? ja junction-to-ambient ??? 62 max. 208 147 772 120 298 -55 to + 175 20 1.4 10lbf in (1.1n m) c/w a c 300 238 see fig. 14, 15, 22a, 22b 208 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.035 ??? v/c r ds(on) static drain-to-source on-resistance ??? 2.0 2.5 m ? ??? 3.0 ??? m ? v gs( th) gate threshold voltage 2.2 3.0 3.9 v i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 2.6 ??? ? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 5.0ma v gs = 10v, i d = 100a v ds = v gs , i d = 100 a v gs = 20v v gs = -20v v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c v gs = 6.0v, i d = 50a IRFB7440Gpbf 2014-8-13 2 www.kersemi.com
s d g dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 88 ??? ??? s q g total gate charge ??? 90 135 nc q gs gate-to-source charge ??? 23 ??? q gd gate-to-drain ("miller") charge ??? 32 ??? q sync total gate charge sync. (q g - q gd ) ??? 58 ??? t d(on) turn-on delay time ??? 24 ??? ns t r rise time ??? 68 ??? t d(off) turn-off delay time ??? 115 ??? t f fall time ??? 68 ??? c iss input capacitance ??? 4730 ??? pf c oss output capacitance ??? 680 ??? c rss reverse transfer capacitance ??? 460 ??? c oss eff. (er) effective output capacitance (energy related) ??? 845 ??? c oss eff. (tr) effective output capacitance (time related) ??? 980 ??? diode characteristics symbol parameter min. typ. max. units i s continuous source current ??? ??? 193 a (body diode) i sm pulsed source current ??? ??? 772 a (body diode) v sd diode forward voltage ??? 0.9 1.3 v dv/dt peak diode recovery ??? 6.8 ??? v/ns t rr reverse recovery time ??? 24 ??? ns t j = 25c v r = 34v, ??? 28 ??? t j = 125c i f = 100a q rr reverse recovery charge ??? 17 ??? nc t j = 25c di/dt = 100a/ s ??? 20 ??? t j = 125c i rrm reverse recovery current ??? 1.3 ??? a t j = 25c t j = 175c, i s = 100a, v ds = 40v i d = 30a r g = 2.7 ? v gs = 10v v dd = 20v i d = 100a t j = 25c, i s = 100a, v gs = 0v integral reverse p-n junction diode. mosfet symbol showing the conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0 mhz i d = 100a, v ds =0v, v gs = 10v v gs = 0v, v ds = 0v to 32v v gs = 0v, v ds = 0v to 32v conditions v ds = 10v, i d = 100a v ds =20v IRFB7440Gpbf IRFB7440Gpbf 2014-8-13 3 www.kersemi.com
fig 3. typical output characteristics fig 5. typical transfer characteristics fig 6. normalized on-resistance vs. temperature fig 4. typical output characteristics fig 8. typical gate charge vs. gate-to-source voltage fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60 s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3 4 5 6 7 8 9 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v v ds = 20v i d = 100a IRFB7440Gpbf 2014-8-13 4 www.kersemi.com
fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy fig 13. typical on-resistance vs. drain current 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 100 200 300 400 500 600 700 800 i d , drain current (a) 0 10 20 30 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 5.5v v gs = 6.0v v gs = 7.0v v gs = 8.0v v gs =10v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 40 41 42 43 44 45 46 47 48 49 50 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5.0ma 0 5 10 15 20 25 30 35 40 45 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 e n e r g y ( j ) v ds = 0v to 32v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100 sec dc limited by package IRFB7440Gpbf 2014-8-13 5 www.kersemi.com
fig 14. maximum effective transient thermal impedance, junction-to-case fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) IRFB7440Gpbf 2014-8-13 6 www.kersemi.com
! "#"$% &% fig 17. threshold voltage vs. temperature
!' %#()"$% &% ! "#"$% &% !' %#()"$% &% -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 5.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100 a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/ s) 1 2 3 4 5 6 7 8 i r r m ( a ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 1 2 3 4 5 6 7 8 i r r m ( a ) i f = 100a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 40 50 60 70 80 90 100 110 q r r ( n c ) i f = 60a v r = 34v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 20 40 60 80 100 q r r ( n c ) i f = 100a v r = 34v t j = 25c t j = 125c IRFB7440Gpbf 2014-8-13 7 www.kersemi.com
fig 23a. switching time test circuit fig 23b. switching time waveforms fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 22. +,- % "%"&% $# for n-channel power mosfets
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p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period . !" # $%#&'&% . + - + + + - - - ??? ! ??? "#$## ??? % && ??? #$##'$

d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f ( ) ???? * % ??????? '( + - IRFB7440Gpbf 2014-8-13 8 www.kersemi.com

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